Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

The chemical transformations taking place during many of the reactions Si surface have been well documented, but in situ dynamics remain largely unexplored even for widely used electrochemical processes such as metal-assisted etching (MACE). In this work, we design both n- and p-type photoconductors covered with silver nanoparticles to demonstrate photoconductors’ sensitivity MACE process their ability provide information about occurring MACE. experimental results show that exhibit a response is much stronger than light an intensity 2 mW/cm2. observations are further explained by thermodynamic analysis relevant energy levels system, showing how electron hole injection into conduction valence bands Si/etching solution interface contribute excite Si. These clearly new operating mode photoconductors, addition being sensitive excitation light, photoconductor can also be excited providing means monitor thus sensing.